page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures epitaxial planar die construction. ultra - small surface mount package. marking : m b1 maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ector - ba s e v o l t age v cbo 6 0 v col l ector - emitter v o l t age v ce o 3 0 v emitter - base v o l t a g e v ebo 5 v col l ector cur re n t - conti n u o us i c 0 .6 a col l ector p o w e r dissi p a t i on p c 0.3 w juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter s y mbol test conditions m in t yp m ax u nit collector - b as e breakdo w n voltage v cbo i c =10a i e =0 60 v collector - e m itter breakd o wn volta g e v ceo i c =10ma i b =0 30 v emitter - base breakdo w n voltage v ebo i e =10a i c =0 5 v collector cut - off current i cbo v c b =50v i e =0 0.01 a emitter cut - off current i ebo v eb =3v i c =0 0.01 a dc c urrent g ain h fe v c e =10v i c =150ma 100 300 v c e =10v i c =0.1ma 35 v c e =10v i c =1.0ma 50 v c e =10v i c =10ma 75 v c e =10v i c =500ma 30 v c e =1v i c =150ma 50 collector - e m itter saturation voltage v ce(s a t ) i c =500ma i b =50ma i c =150ma i b =15ma 1.6 0.4 v base - emitter saturation voltage v be(sat) i c =500ma i b =50ma i c =150ma i b =15ma 2.6 1.3 v transition frequency f t v c e =20v i c =20ma f=100mhz 250 mhz output capacitance c obo v c b =10v,i e =0,f=1mhz 8.0 pf input capacitance c ibo v eb =0.5v,i c =0, f=1mhz 30 pf delay time t d v c c =30v, v b e (off) =0.5v i c =150ma , i b1 = 15ma 10 ns ( npn ) 1. base 2. emitter sot - 23 3. collecto MMBT2222
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. rise time t r 25 ns storage time t s v cc =30v, i c =150ma i b1 =i b2 =15ma 225 ns fall time t f 60 ns typical characteristics MMBT2222
|
